As mobile technology leaps, the need for more powerful and purposeful smart devices becomes ever more necessary. Withe advent of 5G the smartphone we hold in our hands will be much different, no company knows this better than Samsung. Having seen the evolution, the smartphone maker is betting on storage and has started doubling up production and innovation in this area.
The company has announced that it has begun mass producing the industry’s first 512GB embedded Universal Flash Storage 3.0 for next-generation mobile devices. It is suppose to deliver twice the speed of the previous version giving upcoming devices the ability to support ultra-large high-resolution screens. With the production now in progression, Executive VP Cheol Choi at the memory division mentioned tha the 1TB version will be available later this year.
Samsung is able to achieve this leap in memory storage development when it started to use new technology into its development techniques, for instance the 512GB stacks eight of the company’s fifth-generation 512-gigabit (Gb) V-NAND die and integrates a high-performance controller. At 2,100 megabytes-per-second, the new eUFS doubles the sequential read rate of Samsung’s latest memory which was announced in January. The result, read speed is now four times faster than that of a SATA solid state drive and 20 times faster than a typical microSD card, allowing top-end smartphones to transfer a Full HD movie to a PC in about three seconds.
Following the 512GB as well as the 128GB version (found on the S10) both launched this month, Samsung plans to produce 1TB and 256GB models in the second half of the year.
