The mass production of Samsung’s second generation DRAM memory chips is now underway, the company announces. The new modules will target power efficiency and feature a thinner physical size. Apart from that, these LPDDR4X (Low Power, Double Data Rate, 4X) DRAM chips use a 10-nanometre manufacturing process and will feature in future premium smartphones.

The main takeaway from the LPDDR4X DRAM is its 10% reduction in power consumption compared to those in current flagship mobile devices. In essence, users will find a little more spare battery on their phones, even as this module maintains the standard 4,266 megabits per second (Mb/s) transfer rate.

“The advent of 10nm-class mobile DRAM will enable significantly enhanced solutions for next-generation, flagship mobile devices that should first hit the market late this year or the first part of 2019.” says Sewon Chun, senior vice president of Memory Sales & Marketing at Samsung Electronics. “We will continue to grow our premium DRAM lineup to lead the ‘high-performance, high capacity, and low power’ memory segment to meet the market demand and strengthen our business competitiveness.”

Samsung adds that it has achieved a thinner 8GB LPDDR4X mobile DRAM package by combining four of the 16Gb LPDDR4X DRAM chips. While boasting a data rate of 34.1GB per second, the thickness drops by 20%, enabling slimmer yet more effective mobile devices.

In response to increasing demand, Samsung also operates a new DRAM production line in Pyeongtaek, Korea. This ensures a stable supply as it slowly rolls out the 10nm-class LPDDR4X DRAM modules.

The new chips should start showing up by next year in Samsung’s future devices. Follow Samsung’s Facebook to get the latest official information on its next devices.

(Source: Samsung)